FFAF60UA60DN
—
Ultrafast ll Dual Diode
www.fairchildsemi.com
2
?2009 Fairchild Semiconductor Corporation
FFAF60UA60DN Rev.C1
Electrical Characteristics Per leg at TC = 25oC
unless otherwise noted
Symbol
Parameter
Min.
Typ.
Max.
Unit
VFM1
IF
=
30
A
IF
=
30
A
TC = 25oC
TC = 125oC
-
-
-
-
2.2
2.0
V
IRM1
VR
=
600
V
VR
=
600
V
TC = 25oC
TC = 125oC
-
-
-
-
100
150
?A
trr
Irr
Qrr
IF
=
30
A, di
F/dt = 200
A/
?s
TC = 25oC
-
-
-
-
-
-
90
8
360
ns
A
nC
WAVL
Avalanche Energy ( L = 40 mH)
20
-
-
mJ
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
Test Circuit and Waveforms
Notes:
1: Pulse: Test Pulse width = 300?s, Duty Cycle = 2%
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